Electrical characterization of Si Nanowire based devices – transistors and SONOS memory
A vertical gate-all-around (GAA) non-volatile memory (NVM) SONOS and PMOS vertical gate-all-around (GAA) Silicon Nanowire with the height of 150nm and diameter of ~20nm for the memory and height of 600~700nm and diameter of ~5nm is being study. In this work, the main aim is to find out the electrica...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/40239 |