Properties of InSb thin film deposited by MOCVD
This report intends to present the research results obtained by the author in Final Year Project No. A6211-091: Properties of InSb thin film deposited by MOCVD. Infrared (IR) radiation is widely used in diverse technical and scientific fields including spectroscopy, optical communications, and other...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/40760 |
| _version_ | 1811695296187465728 |
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| author | Zhang, Hao |
| author2 | Zhang Dao Hua |
| author_facet | Zhang Dao Hua Zhang, Hao |
| author_sort | Zhang, Hao |
| collection | NTU |
| description | This report intends to present the research results obtained by the author in Final Year Project No. A6211-091: Properties of InSb thin film deposited by MOCVD. Infrared (IR) radiation is widely used in diverse technical and scientific fields including spectroscopy, optical communications, and other measurement applications. Progress in IR detector technology has been connected mainly with semiconductor IR detectors. At present, III-V compound semiconductors provide the materials basis for a well-established IR detector technology.
In this report, the properties of InSb thin film grown by MOCVD, which is an important material for mid-wavelength infrared (MWIR) applications, are studied. A literature review covering the knowledge on basic, electrical, optical and structural properties of InSb is elaborated, followed by the introduction of the experiment set up.
Furthermore, three samples of InSb thin films are grown in different growth conditions on InSb substrate. Scanning Electron Microscopy (SEM) and X-Ray Diffraction are (XRD) carried out to observe the surface morphology and quality of the sample films. Hall measurement is used to investigate the electrical properties of the samples. Photoluminescence (PL) measurement is done to further study the structural and optical properties. InSb substrate is also measured for comparison. |
| first_indexed | 2024-10-01T07:21:13Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/40760 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:21:13Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/407602023-07-07T16:13:39Z Properties of InSb thin film deposited by MOCVD Zhang, Hao Zhang Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This report intends to present the research results obtained by the author in Final Year Project No. A6211-091: Properties of InSb thin film deposited by MOCVD. Infrared (IR) radiation is widely used in diverse technical and scientific fields including spectroscopy, optical communications, and other measurement applications. Progress in IR detector technology has been connected mainly with semiconductor IR detectors. At present, III-V compound semiconductors provide the materials basis for a well-established IR detector technology. In this report, the properties of InSb thin film grown by MOCVD, which is an important material for mid-wavelength infrared (MWIR) applications, are studied. A literature review covering the knowledge on basic, electrical, optical and structural properties of InSb is elaborated, followed by the introduction of the experiment set up. Furthermore, three samples of InSb thin films are grown in different growth conditions on InSb substrate. Scanning Electron Microscopy (SEM) and X-Ray Diffraction are (XRD) carried out to observe the surface morphology and quality of the sample films. Hall measurement is used to investigate the electrical properties of the samples. Photoluminescence (PL) measurement is done to further study the structural and optical properties. InSb substrate is also measured for comparison. Bachelor of Engineering 2010-06-21T07:24:00Z 2010-06-21T07:24:00Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/40760 en Nanyang Technological University 60 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Zhang, Hao Properties of InSb thin film deposited by MOCVD |
| title | Properties of InSb thin film deposited by MOCVD |
| title_full | Properties of InSb thin film deposited by MOCVD |
| title_fullStr | Properties of InSb thin film deposited by MOCVD |
| title_full_unstemmed | Properties of InSb thin film deposited by MOCVD |
| title_short | Properties of InSb thin film deposited by MOCVD |
| title_sort | properties of insb thin film deposited by mocvd |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/40760 |
| work_keys_str_mv | AT zhanghao propertiesofinsbthinfilmdepositedbymocvd |