ISFET characterization for interface circuit design
ISFET is one of the most commonly used devices in monitoring pH level of solutions. In this report some basic theories of the ISFET will be covered. In order for the ISFET to be able to use in actual field work, the ISFET needs to be characterized and also to reduce noise from being pick up. Experim...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/40876 |
| _version_ | 1811680727334387712 |
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| author | Lim, Lawrence Zhi Cong. |
| author2 | Chan Pak Kwong |
| author_facet | Chan Pak Kwong Lim, Lawrence Zhi Cong. |
| author_sort | Lim, Lawrence Zhi Cong. |
| collection | NTU |
| description | ISFET is one of the most commonly used devices in monitoring pH level of solutions. In this report some basic theories of the ISFET will be covered. In order for the ISFET to be able to use in actual field work, the ISFET needs to be characterized and also to reduce noise from being pick up. Experiments are being conducted and the results have been recorded in this report to observe what effects the parameters have on the ISFET, like distance and ion concentration. |
| first_indexed | 2024-10-01T03:29:39Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/40876 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:29:39Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/408762023-07-07T16:38:06Z ISFET characterization for interface circuit design Lim, Lawrence Zhi Cong. Chan Pak Kwong School of Electrical and Electronic Engineering Centre for Integrated Circuits and Systems DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits ISFET is one of the most commonly used devices in monitoring pH level of solutions. In this report some basic theories of the ISFET will be covered. In order for the ISFET to be able to use in actual field work, the ISFET needs to be characterized and also to reduce noise from being pick up. Experiments are being conducted and the results have been recorded in this report to observe what effects the parameters have on the ISFET, like distance and ion concentration. Bachelor of Engineering 2010-06-23T04:53:09Z 2010-06-23T04:53:09Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/40876 en Nanyang Technological University 49 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Lim, Lawrence Zhi Cong. ISFET characterization for interface circuit design |
| title | ISFET characterization for interface circuit design |
| title_full | ISFET characterization for interface circuit design |
| title_fullStr | ISFET characterization for interface circuit design |
| title_full_unstemmed | ISFET characterization for interface circuit design |
| title_short | ISFET characterization for interface circuit design |
| title_sort | isfet characterization for interface circuit design |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/40876 |
| work_keys_str_mv | AT limlawrencezhicong isfetcharacterizationforinterfacecircuitdesign |