Characterization of nanostructured memory
An Al-rich aluminum nitride (AlN) thin film is deposited on a p-type silicon substrate by radio frequency (RF) sputtering, rapid thermal annealing (RTA) and electron beam physical vapor deposition (E-beam PVD) to form Al/Al-rich AlN/p-Si diodes. Al nanocrystals (nc-Al) are found to be embedded in t...
| Үндсэн зохиолч: | |
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| Бусад зохиолчид: | |
| Формат: | Final Year Project (FYP) |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2010
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| Нөхцлүүд: | |
| Онлайн хандалт: | http://hdl.handle.net/10356/40915 |