Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide.
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/4161 |
| _version_ | 1826111776485277696 |
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| author | Chow, Fong Ling |
| author2 | Lee Pooi See |
| author_facet | Lee Pooi See Chow, Fong Ling |
| author_sort | Chow, Fong Ling |
| collection | NTU |
| description | This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide. |
| first_indexed | 2024-10-01T02:56:19Z |
| format | Thesis |
| id | ntu-10356/4161 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T02:56:19Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/41612023-07-04T16:59:04Z Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing Chow, Fong Ling Lee Pooi See Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide. MASTER OF ENGINEERING (EEE) 2008-09-17T09:45:49Z 2008-09-17T09:45:49Z 2005 2005 Thesis Chow, F. L. (2005). Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4161 10.32657/10356/4161 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Chow, Fong Ling Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| title | Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| title_full | Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| title_fullStr | Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| title_full_unstemmed | Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| title_short | Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| title_sort | formation of silicide films in advanced silicon devices using excimer pulsed laser annealing |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/4161 |
| work_keys_str_mv | AT chowfongling formationofsilicidefilmsinadvancedsilicondevicesusingexcimerpulsedlaserannealing |