Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conducti...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/4196 |
| _version_ | 1826125466576093184 |
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| author | Dang, Yuxing |
| author2 | Fan Weijun |
| author_facet | Fan Weijun Dang, Yuxing |
| author_sort | Dang, Yuxing |
| collection | NTU |
| description | III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conduction band offset. |
| first_indexed | 2024-10-01T06:37:03Z |
| format | Thesis |
| id | ntu-10356/4196 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T06:37:03Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/41962023-07-04T16:44:13Z Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells Dang, Yuxing Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conduction band offset. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:46:30Z 2008-09-17T09:46:30Z 2007 2007 Thesis Dang, Y. (2007). Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4196 10.32657/10356/4196 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Dang, Yuxing Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells |
| title | Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells |
| title_full | Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells |
| title_fullStr | Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells |
| title_full_unstemmed | Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells |
| title_short | Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells |
| title_sort | intersubband transitions and anneal induced interdiffusion effects in iii v n quantum wells |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | https://hdl.handle.net/10356/4196 |
| work_keys_str_mv | AT dangyuxing intersubbandtransitionsandannealinducedinterdiffusioneffectsiniiivnquantumwells |