Study of compound semiconductor quantum dots for photonic modulators
The demand of bandwidth capacity is rising exponentially in recent years due to the spread of high-speed Internet. For low-cost Metropolitan Area Network (WAN), operating wavelength at 1.3 µm is chosen. Conventionally, optoelectronic devices operating at 1.3 µm were based on InP substrates. GaAs is...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/42315 |