Determination of carrier lifetime in power semiconductor devices
In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importan...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4294 |
| Summary: | In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importance of considering a non-uniform lifetime profile is to suit the new fabrication techniques. |
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