65 nm BEOL electro-copper plating gap fill capability study
The objectives of this project include reducing Cu void defects, prolonging metal electromigration (EM) lifetime and improving wafer yield. As a result of the project, the Ta/TaN/Ta tri-layer barrier in the advanced direct contact via (ADCV) structures, via bottom removal and 3-step Cu seed for dual...
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| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | https://hdl.handle.net/10356/43218 |