Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects
Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | https://hdl.handle.net/10356/43533 |
| _version_ | 1811678039104290816 |
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| author | Fu, Chunmiao |
| author2 | Wu Shao Hui |
| author_facet | Wu Shao Hui Fu, Chunmiao |
| author_sort | Fu, Chunmiao |
| collection | NTU |
| description | Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially with the introduction of Cu and low-k dielectric material in the backend integrated circuits. Reservoir region can contribute better EM reliability of interconnects. However, the effectiveness of the reservoir effect in improving EM reliability as a function of line width has not been studied. In this work, experimental studies on the reservoir effect of EM reliability are performed for the Cu/low-k dual-damascene interconnects with varied reservoir lengths in both narrow and wide metal lines. Finite element simulation is applied to assist us in understanding the mechanism of reservoir effect effectiveness. |
| first_indexed | 2024-10-01T02:46:55Z |
| format | Thesis |
| id | ntu-10356/43533 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:46:55Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/435332023-07-04T16:57:36Z Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects Fu, Chunmiao Wu Shao Hui Tan Cher Ming School of Electrical and Electronic Engineering Centre for Integrated Circuits and Systems DRNTU::Engineering::Electrical and electronic engineering::Electronic systems Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially with the introduction of Cu and low-k dielectric material in the backend integrated circuits. Reservoir region can contribute better EM reliability of interconnects. However, the effectiveness of the reservoir effect in improving EM reliability as a function of line width has not been studied. In this work, experimental studies on the reservoir effect of EM reliability are performed for the Cu/low-k dual-damascene interconnects with varied reservoir lengths in both narrow and wide metal lines. Finite element simulation is applied to assist us in understanding the mechanism of reservoir effect effectiveness. MASTER OF ENGINEERING (EEE) 2011-03-22T00:49:07Z 2011-03-22T00:49:07Z 2011 2011 Thesis Fu, C. (2011). Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/43533 10.32657/10356/43533 en 126 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems Fu, Chunmiao Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects |
| title | Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects |
| title_full | Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects |
| title_fullStr | Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects |
| title_full_unstemmed | Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects |
| title_short | Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects |
| title_sort | study on the effectiveness of reservoir length in improving electromigration in cu low k interconnects |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems |
| url | https://hdl.handle.net/10356/43533 |
| work_keys_str_mv | AT fuchunmiao studyontheeffectivenessofreservoirlengthinimprovingelectromigrationinculowkinterconnects |