CMOS curvature-corrected voltage reference

A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1...

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Bibliographic Details
Main Author: Hon, Yau Kin.
Other Authors: Ng, Lian Soon
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4374
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author Hon, Yau Kin.
author2 Ng, Lian Soon
author_facet Ng, Lian Soon
Hon, Yau Kin.
author_sort Hon, Yau Kin.
collection NTU
description A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1.25 V output voltage over a power supply range from 2.4 V to 3.6V. Such a design is suitable for two-battery portable applications. The whole design is divided into several functional blocks and each block is layed out separately in a standard height manner so that each functional block could be reused easily in other designs. Most of the functional blocks have been characterized, and closely matched the simulation results.
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spelling ntu-10356/43742023-07-04T15:18:40Z CMOS curvature-corrected voltage reference Hon, Yau Kin. Ng, Lian Soon School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1.25 V output voltage over a power supply range from 2.4 V to 3.6V. Such a design is suitable for two-battery portable applications. The whole design is divided into several functional blocks and each block is layed out separately in a standard height manner so that each functional block could be reused easily in other designs. Most of the functional blocks have been characterized, and closely matched the simulation results. Master of Science (Consumer Electronics) 2008-09-17T09:50:17Z 2008-09-17T09:50:17Z 2000 2000 Thesis http://hdl.handle.net/10356/4374 Nanyang Technological University application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Power electronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Hon, Yau Kin.
CMOS curvature-corrected voltage reference
title CMOS curvature-corrected voltage reference
title_full CMOS curvature-corrected voltage reference
title_fullStr CMOS curvature-corrected voltage reference
title_full_unstemmed CMOS curvature-corrected voltage reference
title_short CMOS curvature-corrected voltage reference
title_sort cmos curvature corrected voltage reference
topic DRNTU::Engineering::Electrical and electronic engineering::Power electronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
url http://hdl.handle.net/10356/4374
work_keys_str_mv AT honyaukin cmoscurvaturecorrectedvoltagereference