Characterization of gate oxide degradation caused by electrical stress
In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4396 |
| _version_ | 1826114509488521216 |
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| author | Huang, Jiayi. |
| author2 | Chen, Tupei |
| author_facet | Chen, Tupei Huang, Jiayi. |
| author_sort | Huang, Jiayi. |
| collection | NTU |
| description | In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct-current current-voltage (DCIV) techniques have been used. |
| first_indexed | 2024-10-01T03:40:38Z |
| format | Thesis |
| id | ntu-10356/4396 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:40:38Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/43962023-07-04T15:52:52Z Characterization of gate oxide degradation caused by electrical stress Huang, Jiayi. Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct-current current-voltage (DCIV) techniques have been used. Master of Engineering 2008-09-17T09:50:41Z 2008-09-17T09:50:41Z 2003 2003 Thesis http://hdl.handle.net/10356/4396 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Huang, Jiayi. Characterization of gate oxide degradation caused by electrical stress |
| title | Characterization of gate oxide degradation caused by electrical stress |
| title_full | Characterization of gate oxide degradation caused by electrical stress |
| title_fullStr | Characterization of gate oxide degradation caused by electrical stress |
| title_full_unstemmed | Characterization of gate oxide degradation caused by electrical stress |
| title_short | Characterization of gate oxide degradation caused by electrical stress |
| title_sort | characterization of gate oxide degradation caused by electrical stress |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/4396 |
| work_keys_str_mv | AT huangjiayi characterizationofgateoxidedegradationcausedbyelectricalstress |