Resistance switching of BST thin films
The purpose of this project is to study the I-V characteristics of resistance switching oxides to give us a better understanding of their behaviors and the possibility of implementing them into memory devices. This study focuses on barium strontium titanium oxide. The sample is prepared by pulse las...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/44161 |