State-of-the-art VCO design
The designs of Voltage Controlled Oscillators (VCO) are explored in this project in a standard RF 65nm CMOS technology. Four different VCOs (A, B, C and D) are designed and compared to discuss the advantages of PMOS transistors and capacitive cross-coupled feedback. With the contract of NMOS, the...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/10356/44932 |
| _version_ | 1826109897326985216 |
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| author | Gao, Yuan. |
| author2 | Boon Chirn Chye |
| author_facet | Boon Chirn Chye Gao, Yuan. |
| author_sort | Gao, Yuan. |
| collection | NTU |
| description | The designs of Voltage Controlled Oscillators (VCO) are explored in this project in a standard RF 65nm CMOS technology. Four different VCOs (A, B, C and D) are designed and compared to discuss the advantages of PMOS transistors and capacitive cross-coupled feedback.
With the contract of NMOS, the oscillators built with PMOS transistors have an improvement about 5dB phase noise. However, due to the lager parasitic capacitance of PMOS, the VCOs, which employ PMOS as their core transistors, achieve relatively lower frequencies. In addition, the capacitive feedback in a VCO can provide a favorable condition for the maximum amplitude. This improvement of phase noise can be obvious in the case of PMOS VCOs. But the disadvantage of capacitive feedback is that the large fixed capacitors in the circuits decreasing the oscillating frequency and tuning range.
For the employment of PMOS, Design A with capacitive feedback can generate 41GHz, and display -99.5dBc/Hz @1MHz and -120.07dBc/Hz @10MHz. While there is no capacitor in the feedback of Design B, the oscillator having 51GHz frequency obtains -95.85dBc/Hz @1MHz and -116dBc/Hz @10MHz. For the employment of NMOS, Design C with 48GHz has the phase noise of -89.38 @1MHz and -111.4dBc/Hz @10MHz. Design D achieving 66GHz frequency has the phase noise of -91.96dBc/Hz @1MHz and -114.5dBc/Hz @10MHz. |
| first_indexed | 2024-10-01T02:25:35Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/44932 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:25:35Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/449322023-07-07T17:44:10Z State-of-the-art VCO design Gao, Yuan. Boon Chirn Chye School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The designs of Voltage Controlled Oscillators (VCO) are explored in this project in a standard RF 65nm CMOS technology. Four different VCOs (A, B, C and D) are designed and compared to discuss the advantages of PMOS transistors and capacitive cross-coupled feedback. With the contract of NMOS, the oscillators built with PMOS transistors have an improvement about 5dB phase noise. However, due to the lager parasitic capacitance of PMOS, the VCOs, which employ PMOS as their core transistors, achieve relatively lower frequencies. In addition, the capacitive feedback in a VCO can provide a favorable condition for the maximum amplitude. This improvement of phase noise can be obvious in the case of PMOS VCOs. But the disadvantage of capacitive feedback is that the large fixed capacitors in the circuits decreasing the oscillating frequency and tuning range. For the employment of PMOS, Design A with capacitive feedback can generate 41GHz, and display -99.5dBc/Hz @1MHz and -120.07dBc/Hz @10MHz. While there is no capacitor in the feedback of Design B, the oscillator having 51GHz frequency obtains -95.85dBc/Hz @1MHz and -116dBc/Hz @10MHz. For the employment of NMOS, Design C with 48GHz has the phase noise of -89.38 @1MHz and -111.4dBc/Hz @10MHz. Design D achieving 66GHz frequency has the phase noise of -91.96dBc/Hz @1MHz and -114.5dBc/Hz @10MHz. Bachelor of Engineering 2011-06-07T03:34:14Z 2011-06-07T03:34:14Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/44932 en Nanyang Technological University 53 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Gao, Yuan. State-of-the-art VCO design |
| title | State-of-the-art VCO design |
| title_full | State-of-the-art VCO design |
| title_fullStr | State-of-the-art VCO design |
| title_full_unstemmed | State-of-the-art VCO design |
| title_short | State-of-the-art VCO design |
| title_sort | state of the art vco design |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | http://hdl.handle.net/10356/44932 |
| work_keys_str_mv | AT gaoyuan stateoftheartvcodesign |