Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films
Silicon nanocrystals (Si nc) have exhibited its potential in light emission and memory effects for the past decade. Due to its compatibility with Si technology and materials, this form of nanostructure is highly valued by many research groups. Many methods have been proposed to fabricate Si nc which...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/4556 |
| _version_ | 1826118468686053376 |
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| author | Lau, Hon Wu |
| author2 | Alastair David Trigg |
| author_facet | Alastair David Trigg Lau, Hon Wu |
| author_sort | Lau, Hon Wu |
| collection | NTU |
| description | Silicon nanocrystals (Si nc) have exhibited its potential in light emission and memory effects for the past decade. Due to its compatibility with Si technology and materials, this form of nanostructure is highly valued by many research groups. Many methods have been proposed to fabricate Si nc which includes ion-implantation, chemical vapour deposition (CVD), laser ablation and co-sputtering. However, these methods are often expensive and require a matrix, such as SiO2 or Si3N4, to embed the Si nc. The presence of such a matrix creates complications for the study of the Si nc intrinsic characteristics. In seeking a method to eliminate these two constraints, solid state reaction (SSR) - a dry chemical or physical process without adding any solvent - (also known as mechanical milling in this case) is employed to fabricate Si nc in this project. |
| first_indexed | 2024-10-01T04:43:55Z |
| format | Thesis |
| id | ntu-10356/4556 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T04:43:55Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/45562023-07-04T17:38:45Z Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films Lau, Hon Wu Alastair David Trigg Tan Ooi Kiang School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Silicon nanocrystals (Si nc) have exhibited its potential in light emission and memory effects for the past decade. Due to its compatibility with Si technology and materials, this form of nanostructure is highly valued by many research groups. Many methods have been proposed to fabricate Si nc which includes ion-implantation, chemical vapour deposition (CVD), laser ablation and co-sputtering. However, these methods are often expensive and require a matrix, such as SiO2 or Si3N4, to embed the Si nc. The presence of such a matrix creates complications for the study of the Si nc intrinsic characteristics. In seeking a method to eliminate these two constraints, solid state reaction (SSR) - a dry chemical or physical process without adding any solvent - (also known as mechanical milling in this case) is employed to fabricate Si nc in this project. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:54:12Z 2008-09-17T09:54:12Z 2006 2006 Thesis Lau, H. W. (2006). Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4556 10.32657/10356/4556 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Lau, Hon Wu Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films |
| title | Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films |
| title_full | Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films |
| title_fullStr | Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films |
| title_full_unstemmed | Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films |
| title_short | Solid-state reaction silicon nanocrystals in sol-gel tetraethylorthosilicate thin films |
| title_sort | solid state reaction silicon nanocrystals in sol gel tetraethylorthosilicate thin films |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/4556 |
| work_keys_str_mv | AT lauhonwu solidstatereactionsiliconnanocrystalsinsolgeltetraethylorthosilicatethinfilms |