Power and energy efficient ultra-fine-grained power switch for SRAMs
In this project, an energy efficient ultra-fine-grained power switch is implemented on a 0.4V, 16kb SRAM. This SRAM had been fabricated on a UMC 65nm CMOS process. Key features of this power switch include the ability to extend power control to every memory cell without the need for any external sig...
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| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/45579 |
| Summary: | In this project, an energy efficient ultra-fine-grained power switch is implemented on a 0.4V, 16kb SRAM. This SRAM had been fabricated on a UMC 65nm CMOS process. Key features of this power switch include the ability to extend power control to every memory cell without the need for any external signal. In this implemetation, power is not supplied to memory array until the first write has accurred.This has helped to reduce the power consumption before first write operation by 75/01%. |
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