Characterization and reliability study of non-volatile memory devices
Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/45581 |
| _version_ | 1811676569292242944 |
|---|---|
| author | Tang, Zen Hwai. |
| author2 | Chen Tupei |
| author_facet | Chen Tupei Tang, Zen Hwai. |
| author_sort | Tang, Zen Hwai. |
| collection | NTU |
| description | Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS). |
| first_indexed | 2024-10-01T02:23:33Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/45581 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:23:33Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/455812023-07-07T15:48:26Z Characterization and reliability study of non-volatile memory devices Tang, Zen Hwai. Chen Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::integrated circuits Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS). Bachelor of Engineering 2011-06-15T04:40:15Z 2011-06-15T04:40:15Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/45581 en Nanyang Technological University 64 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::integrated circuits Tang, Zen Hwai. Characterization and reliability study of non-volatile memory devices |
| title | Characterization and reliability study of non-volatile memory devices |
| title_full | Characterization and reliability study of non-volatile memory devices |
| title_fullStr | Characterization and reliability study of non-volatile memory devices |
| title_full_unstemmed | Characterization and reliability study of non-volatile memory devices |
| title_short | Characterization and reliability study of non-volatile memory devices |
| title_sort | characterization and reliability study of non volatile memory devices |
| topic | DRNTU::Engineering::Electrical and electronic engineering::integrated circuits |
| url | http://hdl.handle.net/10356/45581 |
| work_keys_str_mv | AT tangzenhwai characterizationandreliabilitystudyofnonvolatilememorydevices |