Electrical characterization of GaN-based layer structures
Wide band gap semiconductors are attractive for several microelectronic and photonic applications such as high power amplifiers, LEDs and laser diodes. Particularly, GaN-based semiconductors are promising as they exhibit attractive properties such as low intrinsic carrier concentration and high ther...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/10356/45886 |