Low frequency noise measurement in the MOS transistor
Low frequency, 1/f noise measurements on a number of silicon dioxide gate dielectric based commercial MOS transistors and new material high-k gate dielectric transistors have been performed. The low frequency noise spectrum and the dependence of noise on the different gate dielectrics, channel lengt...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/10356/45922 |