Design and analysis of class-E power amplifier
In this paper, based on the specification assigned, I have designed a low voltage Class-E Power Amplifier (PA) using the 0.18μm TSMC CMOS technology from BSIM3 model to achieve the following results: f = 5.8GHz, Pout = 13.003dBm, VDD = 1.8VDC, Bandwidth = 200MHz, Termination = 50Ω, Power Added E...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/10356/46198 |