Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive b...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4695 |
| _version_ | 1826110111334006784 |
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| author | Lim, Wai Tat. |
| author2 | Pey, Kin Leong |
| author_facet | Pey, Kin Leong Lim, Wai Tat. |
| author_sort | Lim, Wai Tat. |
| collection | NTU |
| description | The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive breakdown, the substantially high localized temperatures in the vicinity of the breakdown spot which can exceed silicon melting point will cause impurity dopants in the silicon to be redistributed. |
| first_indexed | 2024-10-01T02:29:07Z |
| format | Thesis |
| id | ntu-10356/4695 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T02:29:07Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/46952023-07-04T16:25:44Z Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs Lim, Wai Tat. Pey, Kin Leong School of Electrical and Electronic Engineering Tung, Chih Hang DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive breakdown, the substantially high localized temperatures in the vicinity of the breakdown spot which can exceed silicon melting point will cause impurity dopants in the silicon to be redistributed. Master of Science (Microelectronics) 2008-09-17T09:56:49Z 2008-09-17T09:56:49Z 2005 2005 Thesis http://hdl.handle.net/10356/4695 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Lim, Wai Tat. Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs |
| title | Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs |
| title_full | Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs |
| title_fullStr | Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs |
| title_full_unstemmed | Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs |
| title_short | Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs |
| title_sort | study of dopant redistribution during gate oxide breakdown in narrow mosfets |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/4695 |
| work_keys_str_mv | AT limwaitat studyofdopantredistributionduringgateoxidebreakdowninnarrowmosfets |