Physics of nitride-based high density quantum dot lasers
The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum...
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| Format: | Research Report |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/47600 |
| _version_ | 1826113242028572672 |
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| author | Yoon, Soon Fatt. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yoon, Soon Fatt. |
| author_sort | Yoon, Soon Fatt. |
| collection | NTU |
| description | The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular
beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum dot (QD) can be achieved. The use of low-dimensional QD active region for semiconductor laser over QW structures has been expected to improve many aspects of the laser performance such as, decreased transparency current density, higher characteristic temperature and output power, increased differential gain, suppressed carrier diffusion and larger tunability of wavelength emission through controlling the QD size and composition. |
| first_indexed | 2024-10-01T03:19:58Z |
| format | Research Report |
| id | ntu-10356/47600 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:19:58Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/476002023-03-04T03:20:05Z Physics of nitride-based high density quantum dot lasers Yoon, Soon Fatt. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum dot (QD) can be achieved. The use of low-dimensional QD active region for semiconductor laser over QW structures has been expected to improve many aspects of the laser performance such as, decreased transparency current density, higher characteristic temperature and output power, increased differential gain, suppressed carrier diffusion and larger tunability of wavelength emission through controlling the QD size and composition. RG 90/05 2012-01-18T08:51:08Z 2012-01-18T08:51:08Z 2009 2009 Research Report http://hdl.handle.net/10356/47600 en 39 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Yoon, Soon Fatt. Physics of nitride-based high density quantum dot lasers |
| title | Physics of nitride-based high density quantum dot lasers |
| title_full | Physics of nitride-based high density quantum dot lasers |
| title_fullStr | Physics of nitride-based high density quantum dot lasers |
| title_full_unstemmed | Physics of nitride-based high density quantum dot lasers |
| title_short | Physics of nitride-based high density quantum dot lasers |
| title_sort | physics of nitride based high density quantum dot lasers |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio |
| url | http://hdl.handle.net/10356/47600 |
| work_keys_str_mv | AT yoonsoonfatt physicsofnitridebasedhighdensityquantumdotlasers |