Physics of nitride-based high density quantum dot lasers
The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum...
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| Format: | Research Report |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/47600 |