Ultraviolet zinc oxide laser diodes on Si substrate
The main objective of this project is to fabricate ultraviolet (UV) ZnO homojunction laser diodes on Si substrate by using our proposed laser FCVA technique. The objectives of this proposal are listed (in order of priority) below: •To modify the existing pulsed-laser deposition system to laser FC...
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| Format: | Research Report |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/47601 |
| _version_ | 1811684957923311616 |
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| author | Yu, Siu Fung. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yu, Siu Fung. |
| author_sort | Yu, Siu Fung. |
| collection | NTU |
| description | The main objective of this project is to fabricate ultraviolet (UV) ZnO homojunction laser diodes on Si substrate by using our proposed laser FCVA technique. The objectives of this proposal are listed (in order of priority) below:
•To modify the existing pulsed-laser deposition system to laser FCVA system for the fabrication of high-quality n- and p- type ZnO films.
• To fabricate high carrier concentration (>1019 cm–3) and low resistivity (<10–3 Ωcm) p-type ZnO thin films by FCVA technique plus laser ablation using P-compound sources as the dopants,
• To achieve high-efficiency n-ZnO:Al/p-ZnO:P/Si substrate light-emitting diodes (LEDs), and
• To demonstrate UV lasing from the p-ZnO:P/i-ZnO-SiO2 nanocomposite/n-ZnO:Al junction diodes on Si substrate. |
| first_indexed | 2024-10-01T04:36:53Z |
| format | Research Report |
| id | ntu-10356/47601 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:36:53Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/476012023-03-04T03:21:33Z Ultraviolet zinc oxide laser diodes on Si substrate Yu, Siu Fung. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics The main objective of this project is to fabricate ultraviolet (UV) ZnO homojunction laser diodes on Si substrate by using our proposed laser FCVA technique. The objectives of this proposal are listed (in order of priority) below: •To modify the existing pulsed-laser deposition system to laser FCVA system for the fabrication of high-quality n- and p- type ZnO films. • To fabricate high carrier concentration (>1019 cm–3) and low resistivity (<10–3 Ωcm) p-type ZnO thin films by FCVA technique plus laser ablation using P-compound sources as the dopants, • To achieve high-efficiency n-ZnO:Al/p-ZnO:P/Si substrate light-emitting diodes (LEDs), and • To demonstrate UV lasing from the p-ZnO:P/i-ZnO-SiO2 nanocomposite/n-ZnO:Al junction diodes on Si substrate. RG 15/06 2012-01-18T09:01:35Z 2012-01-18T09:01:35Z 2008 2008 Research Report http://hdl.handle.net/10356/47601 en 31 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Yu, Siu Fung. Ultraviolet zinc oxide laser diodes on Si substrate |
| title | Ultraviolet zinc oxide laser diodes on Si substrate |
| title_full | Ultraviolet zinc oxide laser diodes on Si substrate |
| title_fullStr | Ultraviolet zinc oxide laser diodes on Si substrate |
| title_full_unstemmed | Ultraviolet zinc oxide laser diodes on Si substrate |
| title_short | Ultraviolet zinc oxide laser diodes on Si substrate |
| title_sort | ultraviolet zinc oxide laser diodes on si substrate |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/47601 |
| work_keys_str_mv | AT yusiufung ultravioletzincoxidelaserdiodesonsisubstrate |