Fabrication of nanomaterials and related devices

Nanotechnology refers broadly to a field of applied science and technology with a unified theme of control of mater on the nano-meter scale, and fabrication of devices at this scale. In this project, amorphous silica nanowires have been successfully fabricated from the mixture of ZnCh, and V02...

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Bibliographic Details
Main Author: Tay, Beng Kang
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10356/47658
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author Tay, Beng Kang
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tay, Beng Kang
author_sort Tay, Beng Kang
collection NTU
description Nanotechnology refers broadly to a field of applied science and technology with a unified theme of control of mater on the nano-meter scale, and fabrication of devices at this scale. In this project, amorphous silica nanowires have been successfully fabricated from the mixture of ZnCh, and V02 on silicon substrate by controlling the conditions of the vapor-phase transport. Ultra-long cotton-like nanowires with diameters of 20 to 50 nm show strong photoluminescence of red and green light originated from surface NBOHC defect and nonstoichiometric structure. The morphology of SiOx is dependent on synthesis temperature.
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spelling ntu-10356/476582023-03-04T03:24:15Z Fabrication of nanomaterials and related devices Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Nanotechnology refers broadly to a field of applied science and technology with a unified theme of control of mater on the nano-meter scale, and fabrication of devices at this scale. In this project, amorphous silica nanowires have been successfully fabricated from the mixture of ZnCh, and V02 on silicon substrate by controlling the conditions of the vapor-phase transport. Ultra-long cotton-like nanowires with diameters of 20 to 50 nm show strong photoluminescence of red and green light originated from surface NBOHC defect and nonstoichiometric structure. The morphology of SiOx is dependent on synthesis temperature. RGM 35/03 2012-01-25T07:31:10Z 2012-01-25T07:31:10Z 2008 2008 Research Report http://hdl.handle.net/10356/47658 en 124 p. application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Tay, Beng Kang
Fabrication of nanomaterials and related devices
title Fabrication of nanomaterials and related devices
title_full Fabrication of nanomaterials and related devices
title_fullStr Fabrication of nanomaterials and related devices
title_full_unstemmed Fabrication of nanomaterials and related devices
title_short Fabrication of nanomaterials and related devices
title_sort fabrication of nanomaterials and related devices
topic DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
url http://hdl.handle.net/10356/47658
work_keys_str_mv AT taybengkang fabricationofnanomaterialsandrelateddevices