Variable angle spectroellipsometry of silicon based multilayers

Variable angle spectroellipsometry of silicon based multilayers

In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable an...

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Bibliographic Details
Main Author: Loh, Soon Yoong.
Other Authors: Wong, T. S. K.
Format: Thesis
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/4797
Description
Summary:In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable angle spectroscopic ellipsometer (H-VASE) with spectral range of 250nm-1700nm at 70°, 75° and 80° angles of incidence. These measurements were carried out as part of an effort to develop readily usable optical models for monitoring wafers in a university CMOS process facility.

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