Variable angle spectroellipsometry of silicon based multilayers
In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable an...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4797 |
| _version_ | 1811696633067339776 |
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| author | Loh, Soon Yoong. |
| author2 | Wong, T. S. K. |
| author_facet | Wong, T. S. K. Loh, Soon Yoong. |
| author_sort | Loh, Soon Yoong. |
| collection | NTU |
| description | In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable angle spectroscopic ellipsometer (H-VASE) with spectral range of 250nm-1700nm at 70°, 75° and 80° angles of incidence. These measurements were carried out as part of an effort to develop readily usable optical models for monitoring wafers in a university CMOS process facility. |
| first_indexed | 2024-10-01T07:42:28Z |
| format | Thesis |
| id | ntu-10356/4797 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T07:42:28Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/47972023-07-04T15:39:17Z Variable angle spectroellipsometry of silicon based multilayers Loh, Soon Yoong. Wong, T. S. K. School of Electrical and Electronic Engineering Goh, Wang Ling DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable angle spectroscopic ellipsometer (H-VASE) with spectral range of 250nm-1700nm at 70°, 75° and 80° angles of incidence. These measurements were carried out as part of an effort to develop readily usable optical models for monitoring wafers in a university CMOS process facility. Doctor of Philosophy (EEE) 2008-09-17T09:58:53Z 2008-09-17T09:58:53Z 2000 2000 Thesis http://hdl.handle.net/10356/4797 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Loh, Soon Yoong. Variable angle spectroellipsometry of silicon based multilayers |
| title | Variable angle spectroellipsometry of silicon based multilayers |
| title_full | Variable angle spectroellipsometry of silicon based multilayers |
| title_fullStr | Variable angle spectroellipsometry of silicon based multilayers |
| title_full_unstemmed | Variable angle spectroellipsometry of silicon based multilayers |
| title_short | Variable angle spectroellipsometry of silicon based multilayers |
| title_sort | variable angle spectroellipsometry of silicon based multilayers |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | http://hdl.handle.net/10356/4797 |
| work_keys_str_mv | AT lohsoonyoong variableanglespectroellipsometryofsiliconbasedmultilayers |