Germanium on silicon epitaxy and applications
High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/48616 |
| _version_ | 1826115650571993088 |
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| author | Trieu, Thi Mai Trang. |
| author2 | Tan Chuan Seng |
| author_facet | Tan Chuan Seng Trieu, Thi Mai Trang. |
| author_sort | Trieu, Thi Mai Trang. |
| collection | NTU |
| description | High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. |
| first_indexed | 2024-10-01T03:58:34Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/48616 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:58:34Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/486162023-07-07T15:50:31Z Germanium on silicon epitaxy and applications Trieu, Thi Mai Trang. Tan Chuan Seng School of Electrical and Electronic Engineering Tan Yew Heng DRNTU::Engineering::Electrical and electronic engineering::Microelectronics High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Bachelor of Engineering 2012-04-27T06:57:46Z 2012-04-27T06:57:46Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/48616 en Nanyang Technological University 70 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Trieu, Thi Mai Trang. Germanium on silicon epitaxy and applications |
| title | Germanium on silicon epitaxy and applications |
| title_full | Germanium on silicon epitaxy and applications |
| title_fullStr | Germanium on silicon epitaxy and applications |
| title_full_unstemmed | Germanium on silicon epitaxy and applications |
| title_short | Germanium on silicon epitaxy and applications |
| title_sort | germanium on silicon epitaxy and applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/48616 |
| work_keys_str_mv | AT trieuthimaitrang germaniumonsiliconepitaxyandapplications |