Fabrication of graphene based field-effect transistor
In the last few years, extensive research effort has been directed to graphene related area. Owing to its unique honeycomb structure and remarkable electrical properties, graphene is evident to be an ideal conducting channel material in not only field-effect transistors (FET), but also further appli...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/48636 |