Characterization of flicker noise in sub-micron NMOS device

Characterization of flicker noise in sub-micron NMOS device

Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's s...

Detaylı Bibliyografya
Yazar:	Myo Thant Win.
Diğer Yazarlar:	Yeo, Kiat Seng
Materyal Türü:	Tez
Baskı/Yayın Bilgisi:	2008
Konular:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Erişim:	http://hdl.handle.net/10356/4919

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