Simulating the electron beam induced current (EBIC) effect in a computer

Simulating the electron beam induced current (EBIC) effect in a computer

Electron-Beam-Induced Current (EBIC) is a technique that makes use of the induced current generated as the result of the electron beam bombardment upon the specimen for semiconductor materials and devices characterisation. Material characterisation is one of the important fields i...

Bibliográfalaš dieđut
Váldodahkki:	Lim, Wei lun
Eará dahkkit:	Ong Keng Sian, Vincent
Materiálatiipa:	Final Year Project (FYP)
Giella:	English
Almmustuhtton:	2012
Fáttát:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Liŋkkat:	http://hdl.handle.net/10356/49296

Geahča maid

Verification of selected electron beam induced current (EBIC) techniques
Dahkki: Ang, Alex Yong Guan
Almmustuhtton: (2008)

Simulation, modeling and parameter extraction studies in EBIC mode of SEM
Dahkki: Tan, Chee Chin
Almmustuhtton: (2014)

Junction depth & defect characterization with the use of EBIC
Dahkki: Phua, Poh Chin.
Almmustuhtton: (2008)

Choice of generation volume models for electron beam induced current computation
Dahkki: Ong, Vincent K. S., et al.
Almmustuhtton: (2010)

Device parameters characterization with the use of EBIC
Dahkki: Oka Kurniawan
Almmustuhtton: (2010)

Theory of the single contact electron beam induced current effect
Dahkki: Lau, K. T., et al.
Almmustuhtton: (2009)

Extraction of diffusion length using junction-less EBIC
Dahkki: Ong, Vincent K. S., et al.
Almmustuhtton: (2010)

Fabrication of InGaP high electron mobility transistors by electron beam technique
Dahkki: Gay, Boon Ping.
Almmustuhtton: (2008)

Determination of diffusion length from within a confined region with the use of EBIC
Dahkki: Ong, Vincent K. S., et al.
Almmustuhtton: (2009)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
Dahkki: Lee, Wei Yi.
Almmustuhtton: (2009)

Material characterization using electron beam induced current
Dahkki: Wu, Det Hau.
Almmustuhtton: (2008)

Two-dimensional simulation and design of high electron mobility transistors
Dahkki: Kam, Adele Hwei Ting
Almmustuhtton: (2008)

Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths
Dahkki: Ong, Vincent K. S., et al.
Almmustuhtton: (2009)

Characterisation of compound semiconductors grown by molecular beam epitaxy
Dahkki: Zhang, Peng Hua
Almmustuhtton: (2009)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
Dahkki: Han, Zhiyong.
Almmustuhtton: (2008)

Development of molecular beam epitaxial growth processes for RF device technology
Dahkki: Yoon, Soon Fatt.
Almmustuhtton: (2008)

Characterization of III-V semiconductor materials using rocking curve simulations
Dahkki: Wei, Ya Fei.
Almmustuhtton: (2009)

Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
Dahkki: Zhu, Chunlin
Almmustuhtton: (2008)

Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
Dahkki: Mah, Kia Woon
Almmustuhtton: (2008)

Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
Dahkki: Phua, Poh Chin., et al.
Almmustuhtton: (2009)

Determination of material parameters from regions close to the collector using electron beam-induced current
Dahkki: Wu, Dethau., et al.
Almmustuhtton: (2009)

Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
Dahkki: Yoon, Soon-Fatt.
Almmustuhtton: (2011)

Numerical simulation of HEMT devices
Dahkki: Ng, Jun Hao.
Almmustuhtton: (2013)

Design and simulation of infrared photo detectors
Dahkki: Qiu, Feng.
Almmustuhtton: (2012)

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
Dahkki: Yip, Kim Hong.
Almmustuhtton: (2008)

Compact modeling of non-classical MOSFETs for circuit simulation
Dahkki: Zhu, Guojun.
Almmustuhtton: (2011)

Development of power diode numerical modeling for inverse simulation
Dahkki: Yin, Jiaoli.
Almmustuhtton: (2008)

Samples search and study of electronic ceramics for electrical and electronic devices
Dahkki: Choong, Zie Cheng.
Almmustuhtton: (2012)

Device simulation study of lateral Schottky collector phototransistor (SCPT)
Dahkki: Xiao, Yang
Almmustuhtton: (2009)

Size, composition and thermal induced band gap changing of nanostructured semiconductors
Dahkki: Nay Myo Tun
Almmustuhtton: (2010)

Towards a brain-like computer 2
Dahkki: Tan, Wilson Wei Wen
Almmustuhtton: (2023)

The temperature distribution and thermal stresses induced during processing of partial SOI structures
Dahkki: Chen, Junming.
Almmustuhtton: (2008)

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
Dahkki: Vexler, M. I., et al.
Almmustuhtton: (2013)

Simulation of post-breakdown transistor performance in ultrathin gate dielectrics-based nanoscale MOSFETs
Dahkki: Yaw, Meng Kwan.
Almmustuhtton: (2009)

Engineered substrate for electronic and photonics application
Dahkki: Eow, Desmond Fu Shen
Almmustuhtton: (2018)

The animation of electronic and optical process in semiconductor
Dahkki: Tan, JunJie.
Almmustuhtton: (2009)

Design, fabrication, and modelling of 2D material-based electronic devices
Dahkki: Lim, Ryan Christopher Ming Fu
Almmustuhtton: (2021)

Growth and characterization of metamorphic layer structures for high electron mobility transistors
Dahkki: Yuan, Kaihua.
Almmustuhtton: (2008)

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon
Dahkki: Tham, Wai Hoe
Almmustuhtton: (2016)

Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors
Dahkki: Radhakrishnan, K., et al.
Almmustuhtton: (2008)