Simulating the electron beam induced current (EBIC) effect in a computer

Simulating the electron beam induced current (EBIC) effect in a computer

Electron-Beam-Induced Current (EBIC) is a technique that makes use of the induced current generated as the result of the electron beam bombardment upon the specimen for semiconductor materials and devices characterisation. Material characterisation is one of the important fields i...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας:	Lim, Wei lun
Άλλοι συγγραφείς:	Ong Keng Sian, Vincent
Μορφή:	Final Year Project (FYP)
Γλώσσα:	English
Έκδοση:	2012
Θέματα:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Διαθέσιμο Online:	http://hdl.handle.net/10356/49296

Παρόμοια τεκμήρια

Verification of selected electron beam induced current (EBIC) techniques
ανά: Ang, Alex Yong Guan
Έκδοση: (2008)

Simulation, modeling and parameter extraction studies in EBIC mode of SEM
ανά: Tan, Chee Chin
Έκδοση: (2014)

Junction depth & defect characterization with the use of EBIC
ανά: Phua, Poh Chin.
Έκδοση: (2008)

Choice of generation volume models for electron beam induced current computation
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2010)

Device parameters characterization with the use of EBIC
ανά: Oka Kurniawan
Έκδοση: (2010)

Theory of the single contact electron beam induced current effect
ανά: Lau, K. T., κ.ά.
Έκδοση: (2009)

Extraction of diffusion length using junction-less EBIC
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2010)

Fabrication of InGaP high electron mobility transistors by electron beam technique
ανά: Gay, Boon Ping.
Έκδοση: (2008)

Determination of diffusion length from within a confined region with the use of EBIC
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2009)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
ανά: Lee, Wei Yi.
Έκδοση: (2009)

Material characterization using electron beam induced current
ανά: Wu, Det Hau.
Έκδοση: (2008)

Two-dimensional simulation and design of high electron mobility transistors
ανά: Kam, Adele Hwei Ting
Έκδοση: (2008)

Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2009)

Characterisation of compound semiconductors grown by molecular beam epitaxy
ανά: Zhang, Peng Hua
Έκδοση: (2009)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
ανά: Han, Zhiyong.
Έκδοση: (2008)

Development of molecular beam epitaxial growth processes for RF device technology
ανά: Yoon, Soon Fatt.
Έκδοση: (2008)

Characterization of III-V semiconductor materials using rocking curve simulations
ανά: Wei, Ya Fei.
Έκδοση: (2009)

Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
ανά: Zhu, Chunlin
Έκδοση: (2008)

Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
ανά: Mah, Kia Woon
Έκδοση: (2008)

Determining the location of localized defect in the perpendicular junction configuration with the use of electron beam induced current
ανά: Phua, Poh Chin., κ.ά.
Έκδοση: (2009)

Determination of material parameters from regions close to the collector using electron beam-induced current
ανά: Wu, Dethau., κ.ά.
Έκδοση: (2009)

Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
ανά: Yoon, Soon-Fatt.
Έκδοση: (2011)

Numerical simulation of HEMT devices
ανά: Ng, Jun Hao.
Έκδοση: (2013)

Design and simulation of infrared photo detectors
ανά: Qiu, Feng.
Έκδοση: (2012)

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
ανά: Yip, Kim Hong.
Έκδοση: (2008)

Compact modeling of non-classical MOSFETs for circuit simulation
ανά: Zhu, Guojun.
Έκδοση: (2011)

Development of power diode numerical modeling for inverse simulation
ανά: Yin, Jiaoli.
Έκδοση: (2008)

Samples search and study of electronic ceramics for electrical and electronic devices
ανά: Choong, Zie Cheng.
Έκδοση: (2012)

Device simulation study of lateral Schottky collector phototransistor (SCPT)
ανά: Xiao, Yang
Έκδοση: (2009)

Size, composition and thermal induced band gap changing of nanostructured semiconductors
ανά: Nay Myo Tun
Έκδοση: (2010)

Towards a brain-like computer 2
ανά: Tan, Wilson Wei Wen
Έκδοση: (2023)

The temperature distribution and thermal stresses induced during processing of partial SOI structures
ανά: Chen, Junming.
Έκδοση: (2008)

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
ανά: Vexler, M. I., κ.ά.
Έκδοση: (2013)

Simulation of post-breakdown transistor performance in ultrathin gate dielectrics-based nanoscale MOSFETs
ανά: Yaw, Meng Kwan.
Έκδοση: (2009)

Engineered substrate for electronic and photonics application
ανά: Eow, Desmond Fu Shen
Έκδοση: (2018)

The animation of electronic and optical process in semiconductor
ανά: Tan, JunJie.
Έκδοση: (2009)

Design, fabrication, and modelling of 2D material-based electronic devices
ανά: Lim, Ryan Christopher Ming Fu
Έκδοση: (2021)

Growth and characterization of metamorphic layer structures for high electron mobility transistors
ανά: Yuan, Kaihua.
Έκδοση: (2008)

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon
ανά: Tham, Wai Hoe
Έκδοση: (2016)

Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors
ανά: Radhakrishnan, K., κ.ά.
Έκδοση: (2008)