RTS noise characterization of GaN on silicon based HEMT
This project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/49691 |
| _version_ | 1826116643976118272 |
|---|---|
| author | Xiong, Chenxi. |
| author2 | Goh Wang Ling |
| author_facet | Goh Wang Ling Xiong, Chenxi. |
| author_sort | Xiong, Chenxi. |
| collection | NTU |
| description | This project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends reflected in the statistics and explained them reasonably. In cases where the charges have a significant impact on transistor performance, the output signal can be substantial. Thus, it would be meaningful to investigate the nature of RTS for transistors in both time and frequency domain. |
| first_indexed | 2024-10-01T04:14:44Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/49691 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:14:44Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/496912023-07-07T15:51:19Z RTS noise characterization of GaN on silicon based HEMT Xiong, Chenxi. Goh Wang Ling School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends reflected in the statistics and explained them reasonably. In cases where the charges have a significant impact on transistor performance, the output signal can be substantial. Thus, it would be meaningful to investigate the nature of RTS for transistors in both time and frequency domain. Bachelor of Engineering 2012-05-23T04:16:43Z 2012-05-23T04:16:43Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/49691 en Nanyang Technological University 69 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Xiong, Chenxi. RTS noise characterization of GaN on silicon based HEMT |
| title | RTS noise characterization of GaN on silicon based HEMT |
| title_full | RTS noise characterization of GaN on silicon based HEMT |
| title_fullStr | RTS noise characterization of GaN on silicon based HEMT |
| title_full_unstemmed | RTS noise characterization of GaN on silicon based HEMT |
| title_short | RTS noise characterization of GaN on silicon based HEMT |
| title_sort | rts noise characterization of gan on silicon based hemt |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/49691 |
| work_keys_str_mv | AT xiongchenxi rtsnoisecharacterizationofganonsiliconbasedhemt |