Raman spectroscopic study of ZnO surface
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy 60 meV which could lead to lasing action based on exciton recombination even above room temperature. [1] In this study, Raman spectroscope will be used to examine the l...
| প্রধান লেখক: | |
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| অন্যান্য লেখক: | |
| বিন্যাস: | Final Year Project (FYP) |
| ভাষা: | English |
| প্রকাশিত: |
2012
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://hdl.handle.net/10356/49807 |