Raman spectroscopic study of ZnO surface
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy 60 meV which could lead to lasing action based on exciton recombination even above room temperature. [1] In this study, Raman spectroscope will be used to examine the l...
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| Այլ հեղինակներ: | |
| Ձևաչափ: | Final Year Project (FYP) |
| Լեզու: | English |
| Հրապարակվել է: |
2012
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| Առցանց հասանելիություն: | http://hdl.handle.net/10356/49807 |