Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoir:	Tan, Dexter Xueming.
Rannpháirtithe:	Pey Kin Leong
Formáid:	Tráchtas
Teanga:	English
Foilsithe / Cruthaithe:	2012
Ábhair:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Rochtain ar líne:	http://hdl.handle.net/10356/49978

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