Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...

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Dettagli Bibliografici
Autore principale:	Tan, Dexter Xueming.
Altri autori:	Pey Kin Leong
Natura:	Tesi
Lingua:	English
Pubblicazione:	2012
Soggetti:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Accesso online:	http://hdl.handle.net/10356/49978

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