Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...

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Dades bibliogràfiques
Autor principal:	Tan, Dexter Xueming.
Altres autors:	Pey Kin Leong
Format:	Thesis
Idioma:	English
Publicat:	2012
Matèries:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Accés en línia:	http://hdl.handle.net/10356/49978

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