Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...

书目详细资料
主要作者:	Tan, Dexter Xueming.
其他作者:	Pey Kin Leong
格式:	Thesis
语言:	English
出版:	2012
主题:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在线阅读:	http://hdl.handle.net/10356/49978

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