Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement
The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...
| Үндсэн зохиолч: | |
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| Бусад зохиолчид: | |
| Формат: | Дипломын ажил |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2012
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| Нөхцлүүд: | |
| Онлайн хандалт: | http://hdl.handle.net/10356/49978 |