Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement

The aggressive miniaturization of the MOS technology as anticipated by the Moore’s law, demands for the constant exploration of novel methods to obtain highly activated and abrupt shallow junctions. As the devices shrink down to nanoscale dimensions, it is becoming increasingly challenging to keep u...

Bibliografske podrobnosti
Glavni avtor:	Tan, Dexter Xueming.
Drugi avtorji:	Pey Kin Leong
Format:	Thesis
Jezik:	English
Izdano:	2012
Teme:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online dostop:	http://hdl.handle.net/10356/49978

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