Optimizing of TiN barrier properties for CNT interconnects
This report aims to investigate the various parameters on optimizing of the Titanium Nitride (TiN) thin films to achieve low resistivity, fabrication of four point probe flip chip design and measurement of the flip chip interconnection resistance. Three controlled parameters are experimented in the...
Main Author: | Ng, Anthony Tian Shi |
---|---|
Other Authors: | Tay Beng Kang |
Format: | Final Year Project (FYP) |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/50111 |
Similar Items
-
Reliability modeling for ULSI interconnects
by: Hou, Yue Jin
Published: (2010) -
Design and improvements for yield optimization of novel CNT transfer technique
by: Wong, Marcus Hur Koon
Published: (2020) -
Electromigration reliability of copper interconnect in submicron microelectronics application
by: Ang, Kian Ann
Published: (2008) -
Effect of stress migration on electromigration for nano scale advanced interconnects
by: Anson Heryanto
Published: (2012) -
Copper micro and nano particles mixture for 3D interconnection application
by: Dai, Yuan-Yuan
Published: (2016)