Atomistic simulation of structure and mobility of dislocation in semiconductor
The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature.
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/5045 |
| _version_ | 1826118945463074816 |
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| author | Choo, Zhi Min. |
| author2 | Liang, Meng Heng |
| author_facet | Liang, Meng Heng Choo, Zhi Min. |
| author_sort | Choo, Zhi Min. |
| collection | NTU |
| description | The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature. |
| first_indexed | 2024-10-01T04:51:52Z |
| format | Thesis |
| id | ntu-10356/5045 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:51:52Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/50452023-03-04T16:33:12Z Atomistic simulation of structure and mobility of dislocation in semiconductor Choo, Zhi Min. Liang, Meng Heng School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature. Master of Engineering (MSE) 2008-09-17T10:18:21Z 2008-09-17T10:18:21Z 2002 2002 Thesis http://hdl.handle.net/10356/5045 en Nanyang Technological University 111 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Choo, Zhi Min. Atomistic simulation of structure and mobility of dislocation in semiconductor |
| title | Atomistic simulation of structure and mobility of dislocation in semiconductor |
| title_full | Atomistic simulation of structure and mobility of dislocation in semiconductor |
| title_fullStr | Atomistic simulation of structure and mobility of dislocation in semiconductor |
| title_full_unstemmed | Atomistic simulation of structure and mobility of dislocation in semiconductor |
| title_short | Atomistic simulation of structure and mobility of dislocation in semiconductor |
| title_sort | atomistic simulation of structure and mobility of dislocation in semiconductor |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/5045 |
| work_keys_str_mv | AT choozhimin atomisticsimulationofstructureandmobilityofdislocationinsemiconductor |