Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substra...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/50478 |
| _version_ | 1826119692163481600 |
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| author | Lin, Kaixin |
| author2 | Tripathy Sudhiranjan |
| author_facet | Tripathy Sudhiranjan Lin, Kaixin |
| author_sort | Lin, Kaixin |
| collection | NTU |
| description | The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate. |
| first_indexed | 2024-10-01T05:04:33Z |
| format | Thesis |
| id | ntu-10356/50478 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:04:33Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/504782023-03-04T16:38:54Z Gallium nitride based optoelectronic devices on silicon-on-insulator substrates Lin, Kaixin Tripathy Sudhiranjan Akkipeddi Ramam School of Materials Science & Engineering DRNTU::Engineering::Materials::Photonics and optoelectronics materials The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate. DOCTOR OF PHILOSOPHY (MSE) 2012-06-06T02:18:09Z 2012-06-06T02:18:09Z 2012 2012 Thesis Lin,K.X. (2012). Gallium nitride based optoelectronic devices on silicon-on-insulator substrates.Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/50478 10.32657/10356/50478 en 166 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Photonics and optoelectronics materials Lin, Kaixin Gallium nitride based optoelectronic devices on silicon-on-insulator substrates |
| title | Gallium nitride based optoelectronic devices on silicon-on-insulator substrates |
| title_full | Gallium nitride based optoelectronic devices on silicon-on-insulator substrates |
| title_fullStr | Gallium nitride based optoelectronic devices on silicon-on-insulator substrates |
| title_full_unstemmed | Gallium nitride based optoelectronic devices on silicon-on-insulator substrates |
| title_short | Gallium nitride based optoelectronic devices on silicon-on-insulator substrates |
| title_sort | gallium nitride based optoelectronic devices on silicon on insulator substrates |
| topic | DRNTU::Engineering::Materials::Photonics and optoelectronics materials |
| url | https://hdl.handle.net/10356/50478 |
| work_keys_str_mv | AT linkaixin galliumnitridebasedoptoelectronicdevicesonsilicononinsulatorsubstrates |