Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substra...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/50478 |