Processing and characterization of low-k materials for ULSI application

Processing and characterization of low-k materials for ULSI application

In this project, chemical vapor deposited carbon doped oxide films, with dielectric constants in the range of 2.7 to 3.5 were studied.

Bibliographic Details
Main Author:	Widodo, Johnny.
Other Authors:	Mhaisalkar, Subodh Gautam
Format:	Thesis
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:	http://hdl.handle.net/10356/5060

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