Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.
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| Other Authors: | |
| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/5063 |
| _version_ | 1826127510663856128 |
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| author | Kim, Jae Hyung. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Kim, Jae Hyung. |
| author_sort | Kim, Jae Hyung. |
| collection | NTU |
| description | As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance. |
| first_indexed | 2024-10-01T07:09:44Z |
| format | Thesis |
| id | ntu-10356/5063 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T07:09:44Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/50632023-03-04T16:31:17Z Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication Kim, Jae Hyung. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance. Master of Engineering (MSE) 2008-09-17T10:18:58Z 2008-09-17T10:18:58Z 2002 2002 Thesis http://hdl.handle.net/10356/5063 Nanyang Technological University 119 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Kim, Jae Hyung. Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| title | Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| title_full | Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| title_fullStr | Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| title_full_unstemmed | Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| title_short | Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| title_sort | copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects |
| url | http://hdl.handle.net/10356/5063 |
| work_keys_str_mv | AT kimjaehyung copperdiffusionbarriersformultilevelinterconnectingmetalizationschemeinmicroelectronicsappplication |