Design of band-gap reference for high temperature application
CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of thre...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/10356/50906 |
| _version_ | 1826114592475971584 |
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| author | Su, Zun Mon. |
| author2 | Goh Wang Ling |
| author_facet | Goh Wang Ling Su, Zun Mon. |
| author_sort | Su, Zun Mon. |
| collection | NTU |
| description | CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of threshold voltages and mobility of the MOSFET transistors had created challenging problems to achieve the good band-gap reference circuit.
A voltage reference circuits with a 5-V supply was successfully designed. The designed output voltage at 1.17 V achieved a temperature coefficient (TC) of 16.072 ppm/ᵒC. The reference voltage varies only 2 mV over 300ᵒC. The amplifier and bias generator were designed to meet the requirements of the band-gap reference circuits in order to perform well over a wide range of temperature.
Two types of operational amplifiers, folded cascade amplifier and two-stage amplier, were designed for the circuit. Their advantages and disadvantages are discussed in the report. Other different approaches for the better performance of the band-gap reference circuits such as cascade current mirror and using gain enhanced mirror were considered. |
| first_indexed | 2024-10-01T03:41:39Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/50906 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:41:39Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/509062023-07-07T16:25:59Z Design of band-gap reference for high temperature application Su, Zun Mon. Goh Wang Ling School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of threshold voltages and mobility of the MOSFET transistors had created challenging problems to achieve the good band-gap reference circuit. A voltage reference circuits with a 5-V supply was successfully designed. The designed output voltage at 1.17 V achieved a temperature coefficient (TC) of 16.072 ppm/ᵒC. The reference voltage varies only 2 mV over 300ᵒC. The amplifier and bias generator were designed to meet the requirements of the band-gap reference circuits in order to perform well over a wide range of temperature. Two types of operational amplifiers, folded cascade amplifier and two-stage amplier, were designed for the circuit. Their advantages and disadvantages are discussed in the report. Other different approaches for the better performance of the band-gap reference circuits such as cascade current mirror and using gain enhanced mirror were considered. Bachelor of Engineering 2012-12-17T06:23:07Z 2012-12-17T06:23:07Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50906 en Nanyang Technological University 61 p. application/pdf |
| spellingShingle | DRNTU::Engineering Su, Zun Mon. Design of band-gap reference for high temperature application |
| title | Design of band-gap reference for high temperature application |
| title_full | Design of band-gap reference for high temperature application |
| title_fullStr | Design of band-gap reference for high temperature application |
| title_full_unstemmed | Design of band-gap reference for high temperature application |
| title_short | Design of band-gap reference for high temperature application |
| title_sort | design of band gap reference for high temperature application |
| topic | DRNTU::Engineering |
| url | http://hdl.handle.net/10356/50906 |
| work_keys_str_mv | AT suzunmon designofbandgapreferenceforhightemperatureapplication |