Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices
To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory...
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project (FYP) |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/50912 |
_version_ | 1826124457674014720 |
---|---|
author | Niu, Chao. |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Niu, Chao. |
author_sort | Niu, Chao. |
collection | NTU |
description | To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory (stt-mram), comparing different structures of stt-mram with the help of simulation on NVMspice. |
first_indexed | 2024-10-01T06:20:56Z |
format | Final Year Project (FYP) |
id | ntu-10356/50912 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T06:20:56Z |
publishDate | 2012 |
record_format | dspace |
spelling | ntu-10356/509122023-07-07T16:55:13Z Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices Niu, Chao. School of Electrical and Electronic Engineering Yu Hao DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory (stt-mram), comparing different structures of stt-mram with the help of simulation on NVMspice. Bachelor of Engineering 2012-12-17T07:57:56Z 2012-12-17T07:57:56Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50912 en Nanyang Technological University 14 p. application/pdf |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Niu, Chao. Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices |
title | Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices |
title_full | Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices |
title_fullStr | Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices |
title_full_unstemmed | Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices |
title_short | Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices |
title_sort | non volatile memory design platform with 3d hybrid integration of cmos and nano devices |
topic | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
url | http://hdl.handle.net/10356/50912 |
work_keys_str_mv | AT niuchao nonvolatilememorydesignplatformwith3dhybridintegrationofcmosandnanodevices |