Electromigration behaviour of copper metal lines in ULSI devices
The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.
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| Other Authors: | |
| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/5097 |
| _version_ | 1824454787948609536 |
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| author | Ong, Sock Meng. |
| author2 | Park, Hun Sub |
| author_facet | Park, Hun Sub Ong, Sock Meng. |
| author_sort | Ong, Sock Meng. |
| collection | NTU |
| description | The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour. |
| first_indexed | 2025-02-19T03:27:52Z |
| format | Thesis |
| id | ntu-10356/5097 |
| institution | Nanyang Technological University |
| last_indexed | 2025-02-19T03:27:52Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/50972023-03-04T16:31:29Z Electromigration behaviour of copper metal lines in ULSI devices Ong, Sock Meng. Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour. Master of Engineering (SME) 2008-09-17T10:19:54Z 2008-09-17T10:19:54Z 2004 2004 Thesis http://hdl.handle.net/10356/5097 Nanyang Technological University 169 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Ong, Sock Meng. Electromigration behaviour of copper metal lines in ULSI devices |
| title | Electromigration behaviour of copper metal lines in ULSI devices |
| title_full | Electromigration behaviour of copper metal lines in ULSI devices |
| title_fullStr | Electromigration behaviour of copper metal lines in ULSI devices |
| title_full_unstemmed | Electromigration behaviour of copper metal lines in ULSI devices |
| title_short | Electromigration behaviour of copper metal lines in ULSI devices |
| title_sort | electromigration behaviour of copper metal lines in ulsi devices |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects |
| url | http://hdl.handle.net/10356/5097 |
| work_keys_str_mv | AT ongsockmeng electromigrationbehaviourofcoppermetallinesinulsidevices |